Features
² 100% avalanche tested
² Fast Intrinsic Diode
² Gate charge minimized
² Very low intrinsic capacitances
² High speed switching
Product Parameters
Product Name | VDS | ID(25°C) | VGS | Qg | Qgs | Qgd | Package |
MS05N250HGE0 | 2500 V | 500 mA | ±30 V | 7.4 nC | 0.7nC | 5.3nC | TO-263 |
Applications
l High Voltage Power Supplies
l PV Inverter
l Switching applications
Availability
MS05N250HGE0 is now available and on sale.
PHONE: +86 13510329758
MAIL: Iris@maspowersemi.com
Address:519, Building A, Phase I, Huafeng International Robot Industry Park, Intersection of Hangcheng Avenue and Bao'an Avenue, Xixiang Street, Bao'an District, Shenzhen
Copyright © 2021 Shenzhen Maspower Semiconductor Co., Ltd 粤ICP备13013156号