Maspower Semiconductor, a leading manufacturer of advanced semiconductor devices, is proud to introduce the MSG120T65HQC1, a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-power applications. With its exceptional performance characteristics and robust design, the MSG120T65HQC1 sets a new benchmark in the power electronics industry.

Features and Benefits:

Superior Performance Parameters

The MSG120T65HQC1 boasts a low collector-emitter saturation voltage (VCE(sat)) of 1.8V at 120A, ensuring high-speed switching and superior system efficiency. Its tight parameter distribution ensures consistent performance across different operating conditions, making it ideal for demanding applications.

High Current Handling Capability

With a continuous collector current rating of 180A at 25°C and 120A at 100°C, the MSG120T65HQC1 is well-suited for high-current applications. Its pulsed collector current capability of up to 360A and diode maximum forward current of 480A further enhance its versatility and reliability.

Soft Current Turn-off Waveforms

The device features soft current turn-off waveforms, reducing electromagnetic interference (EMI) and improving overall system performance. This makes it an excellent choice for noise-sensitive applications.

Wide Operating Temperature Range

Operating and storage temperatures ranging from -55°C to +175°C ensure reliable performance in extreme environments. The maximum lead temperature for soldering purposes is 300°C, facilitating easy and safe installation.

Efficient Switching Characteristics

The MSG120T65HQC1 exhibits low switching losses, with turn-on loss (Eon) of up to 1.2mJ and turn-off loss (Eoff) of up to 2mJ. This translates into improved system efficiency and reduced heat generation.

The MSG120T65HQC1 is available in the TO-247Plus package, which offers excellent thermal performance and mechanical stability. Its low thermal resistance values ensure efficient heat dissipation, maintaining the device's temperature within safe operating limits.

Applications:

The MSG120T65HQC1 is ideal for a wide range of applications, including but not limited to:

·Traction Inverters for HEV/EVs: Its high-current handling capability and low VCE(sat) make it an excellent choice for electric and hybrid electric vehicle (HEV/EV) traction inverters.

·Auxiliary DC/AC Converters and UPS Systems: The device's high-efficiency and reliable switching characteristics make it perfect for auxiliary converters and uninterruptible power supplies (UPS).

·Motor Drivers: Its robust design and superior performance parameters make the MSG120T65HQC1 an ideal solution for motor drives, enhancing efficiency and reducing operating costs.

·Other Soft-Switching Applications: The device's soft-switching capabilities make it suitable for a variety of noise-sensitive and high-performance applications.

Conclusion:

With its superior performance, high efficiency, and robust design, the MSG120T65HQC1 from Maspower Semiconductor is a game-changer in the power electronics industry. Ideal for a wide range of high-power and demanding applications, this IGBT solution is poised to revolutionize the way we think about power conversion.

Maspower Semiconductor is committed to providing our customers with the most advanced and reliable semiconductor devices on the market.